In this paper, the electric and thermoelectric properties of thin films of germanium⁻gold alloy (Ge⁻Au) are discussed in terms of choosing the optimal deposition process and post-processing conditions to obtain Ge⁻Au layers with the best thermoelectric parameters. Thin films were fabricated by magnetron sputtering using the Ge⁻Au alloy target onto glass substrates at two various conditions; during one of the sputtering processes, the external substrate bias voltage (U_b = −150 V) was used. After deposition thin films were annealed in the atmosphere of N₂ at various temperatures (473, 523 and 573 K) to investigate the influence of annealing temperature on the electric and thermoelectric properties of films. Afterwards, the thermocouples were created by deposition of the NiCrSi/Ag contact pads onto Ge⁻Au films. In this work, particular attention has been paid to thermoelectric properties of fabricated thin films—the thermoelectric voltage, Seebeck coefficient, power factor PF and dimensionless figure of merit ZT were determined.