High Resistivity InSb Crystal Growth using the Vertical Bridgman Method for Fabrication of Schottky Diodes

Shigeomi Hishiki,Yoshitaka Kogetsu,Ikuo Kanno,Hajimu Yamana;Shigeomi Hishiki;Yoshitaka Kogetsu;Ikuo Kanno;Hajimu Yamana;

japanese journal of applied physics 2007 Vol. 46 pp. 5030-5032

177

yamana2007japanesehigh

resistivity schottky diode crystal growth raw materials compound semiconductor radiation detector diode

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271617

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10.1143/jjap.46.5030

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