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First-Principles Study of Interface Stability and Electronic Structure of AlN/GaN Superlattices for High-Electron-Mobility Transistor Applications
Prof. Elena Rostova; Dr. Tariq Al-Mansoor — SciMatic Journal of Applied Physics and Materials Science (2026)
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APA APA 7th
Rostova, P. E., & Al-Mansoor, D. T. (2026). First-Principles Study of Interface Stability and Electronic Structure of AlN/GaN Superlattices for High-Electron-Mobility Transistor Applications. SciMatic Journal of Applied Physics and Materials Science, 1(1), 51-57.
MLA MLA 9th
Rostova, Prof. Elena, and Dr. Tariq Al-Mansoor. "First-Principles Study of Interface Stability and Electronic Structure of AlN/GaN Superlattices for High-Electron-Mobility Transistor Applications." SciMatic Journal of Applied Physics and Materials Science, vol. 1, no. 1, 2026, pp. 51-57.
CHI Chicago
Rostova, Prof. Elena, and Dr. Tariq Al-Mansoor. "First-Principles Study of Interface Stability and Electronic Structure of AlN/GaN Superlattices for High-Electron-Mobility Transistor Applications." SciMatic Journal of Applied Physics and Materials Science 1, no. 1 (2026): 51-57.
HAR Harvard
Rostova, P. E. & Al-Mansoor, D. T. (2026) 'First-Principles Study of Interface Stability and Electronic Structure of AlN/GaN Superlattices for High-Electron-Mobility Transistor Applications', SciMatic Journal of Applied Physics and Materials Science, 1(1), pp. 51-57.
IEEE IEEE
P. E. Rostova, and D. T. Al-Mansoor, "First-Principles Study of Interface Stability and Electronic Structure of AlN/GaN Superlattices for High-Electron-Mobility Transistor Applications," SciMatic Journal of Applied Physics and Materials Science, vol. 1, no. 1, pp. 51-57, 2026.
VAN Vancouver
Rostova PE, Al-Mansoor DT. First-Principles Study of Interface Stability and Electronic Structure of AlN/GaN Superlattices for High-Electron-Mobility Transistor Applications. SciMatic Journal of Applied Physics and Materials Science. 2026;1(1):51-57.
BIB BibTeX
@article{prof2026,
  title     = {First-Principles Study of Interface Stability and Electronic Structure of AlN/GaN Superlattices for High-Electron-Mobility Transistor Applications},
  author    = {Prof. Elena Rostova and Dr. Tariq Al-Mansoor},
  journal   = {SciMatic Journal of Applied Physics and Materials Science},
  volume    = {1},
  number    = {1},
  pages     = {51-57},
  year      = {2026},
}