Interface passivation to overcome shunting in semiconductor-catalyst junctions.

Interface passivation to overcome shunting in semiconductor-catalyst junctions.

Shadabipour, Parisa;Hamann, Thomas W;
Chemical communications (Cambridge, England) 2020
219
shadabipour2020interfacechemical

Abstract

High-performance mesoporous hematite photoanodes modified with a conductive water oxidation catalyst, Ni0.75Fe0.25OxHy, for photoelectrochemical water oxidation are limited by shunting. We present a general method to overcome shunting via the selective electrodeposition of a thin poly(phenylene oxide) (PPO) insulating layer onto the exposed transparent conductive oxide substrate following catalyst deposition.

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ID: 91919
Ref Key: shadabipour2020interfacechemical
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0x95644003c57E6F55A65596E3D9Eac6813e3566dA
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91919
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10.1039/c9cc09597g
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