Solvent Engineering of a Dopant-Free Spiro-OMeTAD Hole-Transport Layer for cm-Scale Perovskite Solar Cells having High Efficiency and Thermal Stability.

Solvent Engineering of a Dopant-Free Spiro-OMeTAD Hole-Transport Layer for cm-Scale Perovskite Solar Cells having High Efficiency and Thermal Stability.

Hu, Min;Wu, Xuelian;Tan, Wen Liang;Tan, Boer;Scully, Andrew D;Ding, Lei;Zhou, Cai;Xiong, Yuli;Huang, Fuzhi;Simonov, Alexandr N;Bach, Udo;Cheng, Yi-Bing;Wang, Shengxiang;Lu, Jianfeng;
ACS applied materials & interfaces 2020
294
hu2020solventacs

Abstract

High efficiency and environmental stability are mandatory performance requirements for commercialization of perovskite solar cells (PSCs). Herein, efficient cm-scale PSCs with improved stability were achieved by incorporating an additive-free 2,2',7,7'-tetrakis[N,N-di(p-methoxyphenyl)amino]-9,9'-spirobifluorene (spiro-OMeTAD) hole transporting material (HTM) through simply substituting the usual chlorobenzene solvent with pentachloroethane (PC). A stabilized power conversion efficiency of 16.1% under simulated AM 1.5G 1-sun illumination with an aperture of 1.00 cm2 was achieved for PSCs using an additive-free spiro-OMeTAD layer cast from PC. X-ray analysis suggests chlorine radicals from pentachloroethane transfer partially to spiro-OMeTAD and retain in the HTM film, resulting of conductivity improvement. Moreover, unencapsulated PSCs having cm-scale active area cast from PC retained >70% of their initial PCE after aging at 80 °C for 500 h, in contrast with less than 20% retention for control devices. Morphological and X-ray analysis of the aged cells revealed that the perovskite and HTM layers remain almost unchanged in the cells with spiro-OMeTAD layer cast from PC whereas serious degradation occurred in the control cells. This study not only reveals the decomposition mechanism of PSCs in the presence of HTM-additives, but also opens up a broad range of organic semiconductors for radical doping.

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ID: 87680
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87680
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10.1021/acsami.9b21177
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