Growth and characterization of MoS2/n-GaN and MoS2/p-GaN vertical heterostructure with wafer scale homogeneity
Current Language EN
English English Türkçe Türkçe Español Español Português Português Pусский Pусский Filipino Filipino Tiếng Việt Tiếng Việt हिन्दी हिन्दी العربية العربية বাংলা বাংলা Deutsch Deutsch 中文 中文

Growth and characterization of MoS2/n-GaN and MoS2/p-GaN vertical heterostructure with wafer scale homogeneity

Lee, J.
solid-state electronics 2020 Vol. 165 pp. 0-0
152
lee2020growthsolidstate

Access

DOI:
10.1016/j.sse.2019.107751

Citation

ID: 78422
Ref Key: lee2020growthsolidstate
Use this key to autocite in SciMatic or Thesis Manager

References

References

No Bibliography

Blockchain Verification

Account:
NFT Contract Address:
0x95644003c57E6F55A65596E3D9Eac6813e3566dA
Article ID:
78422
Unique Identifier:
10.1016/j.sse.2019.107751
Network:
Scimatic Chain (ID: 481)
Blockchain Readiness Checklist
Authors
Abstract
Journal Name
Year
Title
4/5
Blockchain Upload Locked

Complete all 5 checklist items to tokenize your article

Gas fees required in SCI Coins
Buy SCI

Saymatik Web3.0 Wallet

Google Play
App Store