The two-dimensional materials can be used as the channel material of transistor, which can further decrease the size of transistor. In this paper, the molybdenum disulfide (MoS) is grown on the SiO/Si substrate by atmospheric pressure chemical vapor deposition (APCVD), and the MoS is systematically characterized by the high-resolution optical microscopy, Raman spectroscopy, photoluminescence spectroscopy, and the field emission scanning electron microscopy, which can confirm that the MoS is a monolayer. Then, the monolayer MoS is selected as the channel material to complete the fabrication process of the back-gate field effect transistor (FET). Finally, the electrical characteristics of the monolayer MoS-based FET are tested to obtain the electrical performance. The switching ratio is 10, the field effect mobility is about 0.86 cm/Vs, the saturation current is 2.75 × 10 A/μm, and the lowest gate leakage current is 10 A. Besides, the monolayer MoS can form the ohmic contact with the Ti/Au metal electrode. Therefore, the electrical performances of monolayer MoS-based FET are relatively poor, which requires the further optimization of the monolayer MoS growth process. Meanwhile, it can provide the guidance for the application of monolayer MoS-based FETs in the future low-power optoelectronic integrated circuits.