Thermal radiation transfer between two objects separated by a subwavelength gap (near-field thermal radiation transfer) can be orders of magnitude larger than that in free space, which is attracting increasing attention with respect to both fundamental nanoscience and its potential for high-power-density and high-efficiency conversion of heat to electricity in thermophotovoltaic (TPV) systems. However, the realization of near-field thermal radiation transfer in TPV systems involves significant challenges because it requires a subwavelength gap and large temperature difference between the emitter and the PV cell while minimizing the heat transfer that does not contribute to the photocurrent generation. To overcome these challenges, here we demonstrate a one-chip near-field TPV device consisting of a thin-film Si emitter and InGaAs PV cell with an intermediate Si substrate, which enables the suppression of the heat transfer due to sub-bandgap radiation by free carriers and surface modes. Through the one-chip integration and thermal isolation using Si process technologies, we realize a deep subwavelength gap (<150 nm) between the emitter and the intermediate substrate without using any external positioners while maintaining a large temperature difference (>700 K). Compared to the equivalent device operating in the far-field regime, we achieve 10-fold enhancement of the photocurrent in the PV cell without degrading the open-circuit voltage and fill factor, demonstrating the potential of our one-chip device for the future applications of near-field thermal radiation transfer.