A low leakage SRAM bitcell design based on mos-type graphene nano-ribbon fet

A low leakage SRAM bitcell design based on mos-type graphene nano-ribbon fet

Mohammed, M.
proceedings - ieee international symposium on circuits and systems 2019 Vol. 2019-May pp. 0-0
155
mohammed2019aproceedings

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44482
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10.1109/ISCAS.2019.8702461
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