Improved contact resistivity and enhanced mobility of metal-graphene FET by inserting ultra-thin MoOx layer at source/drain region

Improved contact resistivity and enhanced mobility of metal-graphene FET by inserting ultra-thin MoOx layer at source/drain region

Zhang, Y.
aip advances 2019 Vol. 9 pp. 0-0
187
zhang2019improvedaip

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44477
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