Monoenergetic X-ray lines produced by diffraction from a curved crystal monochromator have been used to test the applicability of the Hypermet function for Si(Li) detectors. Excellent fits are achieved; the function's parameters vary smoothly with energy, and the intensity of the non-Gaussian peak components correlates with the thickness of the frontal dead layer where charge collection is incomplete. Accurate silicon escape peak intensities are presented and the contribution to the lineshape from Compton-scattered events is discussed qualitatively.