Anisotropic crystallographic properties, strain, and their effects on band structure of m-plane GaN on LiAlO2(100)
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Anisotropic crystallographic properties, strain, and their effects on band structure of m-plane GaN on LiAlO2(100)

B. Liu,R. Zhang,Z. L. Xie,J. Y. Kong,J. Yao,Q. J. Liu,Z. Zhang,D. Y. Fu,X. Q. Xiu,P. Chen,P. Han,Y. Shi,Y. D. Zheng,S. M. Zhou,G. Edwards;B. Liu;R. Zhang;Z. L. Xie;J. Y. Kong;J. Yao;Q. J. Liu;Z. Zhang;D. Y. Fu;X. Q. Xiu;P. Chen;P. Han;Y. Shi;Y. D. Zheng;S. M. Zhou;G. Edwards;
Applied Physics Letters 2008 Vol. 92 pp. 261906-
180
edwards2008appliedanisotropic

Abstract

The m-plane GaNfilmsgrown on LiAlO2(100) by metal-organic chemical vapor deposition exhibit anisotropic crystallographic properties. The Williamson–Hall plots point out they are due to the different tilts and lateral correlation lengths of mosaic blocks parallel and perpendicular to GaN[0001] in the growth plane. The symmetric and asymmetric reciprocal space maps reveal the strain of m-plane GaN to be biaxial in-plane compress εxx=−0.79% and εzz=−0.14% with an out-of-plane dilatation εyy=0.38%. This anisotropic strain further separates the energy levels of top valence band at Γ point. The energy splitting as 37meV as well as in-plane polarizationanisotropy for transitions are found by the polarized photoluminescence spectra at room temperature.

Keywords

crystal structure photoluminescence iii-v semiconductors semiconductor thin films wide band gap semiconductors gallium compounds mosaic structure stress effects valence bands

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DOI:
10.1063/1.2951618
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https://sciprofiles.com/publication/view/1a0d26303...

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