Impact of Lattice Defects on Device Performance of AlGaAs/GaAs p-HEMTs

Kobayashi, K.;Ohyama, H.;Hakata, T.;Kudou, T.;Shigaki, K.;Takizawa, H.;Kohiki, S.;Uwatoko, Y.;

solid state phenomena 2001 Vol. 78-79 pp. 319-324

103

k.2001solidimpact

algaas/gaas p-hemt induced electron capture levels non-ionizing energy loss number of knock-on atoms radiation damage

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