Radiation hardness studies of AMS HV-CMOS 350 nm prototype chip HVStripV1
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Radiation hardness studies of AMS HV-CMOS 350 nm prototype chip HVStripV1

K. Kanisauskas,A. Affolder,K. Arndt,R. Bates,M. Benoit,F. Di Bello,A. Blue,D. Bortoletto,M. Buckland,C. Buttar,P. Caragiulo,D. Das,J. Dopke,A. Dragone,F. Ehrler,V. Fadeyev,Z. Galloway,H. Grabas,I.M. Gregor,P. Grenier,J. Dopke,F. Ehrler,V. Fadeyev,P. Grenier,A. Grillo,B. Hiti,M. Hoeferkamp,L.B.A. Hommels,B.T. Huffman,J. John,C. Kenney,J. Kramberger,Z. Liang,I. Mandic,L.B.A. Hommels,I. Mandic,D. Maneuski,F. Martinez-McKinney,S. MacMahon,L. Meng,M. Mikuž,D. Muenstermann,R. Nickerson,I. Peric,P. Phillips,R. Plackett,M. Mikuž,I. Peric,F. Rubbo,J. Segal,S. Seidel,A. Seiden,I. Shipsey,W. Song,M. Staniztki,D. Su,C. Tamma,R. Turchetta,I. Shipsey,L. Vigani,J. Volk,R. Wang,M. Warren,F. Wilson,S. Worm,Q. Xiu,J. Zhang,H. Zhu;K. Kanisauskas;A. Affolder;K. Arndt;R. Bates;M. Benoit;F. Di Bello;A. Blue;D. Bortoletto;M. Buckland;C. Buttar;P. Caragiulo;D. Das;J. Dopke;A. Dragone;F. Ehrler;V. Fadeyev;Z. Galloway;H. Grabas;I.M. Gregor;P. Grenier;J. Dopke;F. Ehrler;V. Fadeyev;P. Grenier;A. Grillo;B. Hiti;M. Hoeferkamp;L.B.A. Hommels;B.T. Huffman;J. John;C. Kenney;J. Kramberger;Z. Liang;I. Mandic;L.B.A. Hommels;I. Mandic;D. Maneuski;F. Martinez-McKinney;S. MacMahon;L. Meng;M. Mikuž;D. Muenstermann;R. Nickerson;I. Peric;P. Phillips;R. Plackett;M. Mikuž;I. Peric;F. Rubbo;J. Segal;S. Seidel;A. Seiden;I. Shipsey;W. Song;M. Staniztki;D. Su;C. Tamma;R. Turchetta;I. Shipsey;L. Vigani;J. Volk;R. Wang;M. Warren;F. Wilson;S. Worm;Q. Xiu;J. Zhang;H. Zhu;
journal of instrumentation 2017 Vol. 12 pp. P02010-
208
zhu2017journalradiation

Abstract

CMOS active pixel sensors are being investigated for their potential use in the ATLAS inner tracker upgrade at the HL-LHC. The new inner tracker will have to handle a significant increase in luminosity while maintaining a sufficient signal-to-noise ratio and pulse shaping times. This paper focuses on the prototype chip "HVStripV1" (manufactured in the AMS HV-CMOS 350nm process) characterization before and after irradiation up to fluence levels expected for the strip region in the HL-LHC environment. The results indicate an increase of depletion region after irradiation for the same bias voltage by a factor of ≈2.4 and ≈2.8 for two active pixels on the test chip. There was also a notable increase in noise levels from 85 e− to 386 e− and from 75 e− to 277 e− for the corresponding pixels.

Keywords

noise prototype cmos lhc chip tracker active pixels hvstripv1

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DOI:
10.1088/1748-0221/12/02/p02010
URL:
https://sciprofiles.com/publication/view/fdb0173e8...

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