High quality single atomic layer deposition of hexagonal boron nitride on single crystalline Rh(111) four-inch wafers
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High quality single atomic layer deposition of hexagonal boron nitride on single crystalline Rh(111) four-inch wafers

A. Hemmi,C. Bernard,H. Cun,S. Roth,M. Klöckner,T. Kalin,M. Weinl,S. Gsell,Matthias Schreck,J. Osterwalder,T. Greber;A. Hemmi;C. Bernard;H. Cun;S. Roth;M. Klöckner;T. Kalin;M. Weinl;S. Gsell;Matthias Schreck;J. Osterwalder;T. Greber;
review of scientific instruments 2014 Vol. 85 pp. 035101-
193
greber2014reviewhigh

Abstract

The setup of an apparatus for chemical vapor deposition(CVD) of hexagonal boron nitride (h-BN) and its characterization on four-inch wafers in ultra high vacuum (UHV) environment is reported. It provides well-controlled preparation conditions, such as oxygen and argon plasma assisted cleaning and high temperature annealing. In situ characterization of a wafer is accomplished with target current spectroscopy. A piezo motor driven x-y stage allows measurements with a step size of 1 nm on the complete wafer. To benchmark the system performance, we investigated the growth of single layer h-BN on epitaxial Rh(111) thin films. A thorough analysis of the wafer was performed after cutting in atmosphere by low energy electron diffraction,scanning tunneling microscopy, and ultraviolet and X-ray photoelectron spectroscopies. The apparatus is located in a clean room environment and delivers high quality single layers of h-BN and thus grants access to large area UHV processed surfaces, which had been hitherto restricted to expensive, small area single crystal substrates. The facility is versatile enough for customization to other UHV-CVD processes, e.g., graphene on four-inch wafers.

Keywords

chemical vapour deposition atomic layer deposition annealing boron compounds high-temperature effects iii-v semiconductors low energy electron diffraction plasma materials processing scanning tunnelling microscopy semiconductor growth semiconductor thin films surface cleaning ultraviolet spectra wide band gap semiconductors x-ray photoelectron spectra

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DOI:
10.1063/1.4866648
URL:
https://sciprofiles.com/publication/view/11169cc09...

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