Radiation source dependence of device performance degradation for 4H-SiC MESFETs
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Radiation source dependence of device performance degradation for 4H-SiC MESFETs

H. Ohyama,K. Takakura,K. Uemura,K. Shigaki,T. Kudou,T. Matsumoto,M. Arai,S. Kuboyama,C. Kamezawa,E. Simoen,C. Claeys;H. Ohyama;K. Takakura;K. Uemura;K. Shigaki;T. Kudou;T. Matsumoto;M. Arai;S. Kuboyama;C. Kamezawa;E. Simoen;C. Claeys;
superlattices and microstructures 2006 Vol. 40 pp. 632-637
147
claeys2006superlatticesradiation

Keywords

thermal annealing radiation damage sic-mesfet induced deep levels

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DOI:
10.1016/j.spmi.2006.09.009
URL:
https://sciprofiles.com/publication/view/0c2cd9477...

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Ref Key: claeys2006superlatticesradiation
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