Contactless Measurements of Carrier Concentrations in InGaAs Layers for Utilizing in InP-Based Quantum Cascade Lasers by Employing Optical Spectroscopy
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Contactless Measurements of Carrier Concentrations in InGaAs Layers for Utilizing in InP-Based Quantum Cascade Lasers by Employing Optical Spectroscopy

Kurka M;Rygała M;Sęk G;Gutowski P;Pierściński K;Motyka M;;
Materials (Basel, Switzerland) 2020 Vol. 13 pp. -
169
m2020materialscontactless

Abstract

The precise determination of carrier concentration in doped semiconductor materials and nanostructures is of high importance. Many parameters of an operational device are dependent on the proper carrier concentration or its distribution in both the active area as well as in the passive parts as the …

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National Center for Biotechnology Information NCBI NLM MEDLINE pubmed abstract nih national institutes of health national library of medicine pmid:32664660 pmc7412041 doi:10.3390/ma13143109 marcin kurka michał rygała marcin motyka

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