Electrical characteristics and stability improvement of top-gate in-ga-zn-o thin-film transistors with al2o3/teos oxide gate dielectrics

Electrical characteristics and stability improvement of top-gate in-ga-zn-o thin-film transistors with al2o3/teos oxide gate dielectrics

Lee, Y.S.
coatings 2020 Vol. 10 pp. 1-10
125
lee2020electricalcoatings

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263909
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10.3390/coatings10121146
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