circuit design with adjustable threshold using the independently controlled double gate feature of the vertical slit field effect transistor (vesfet)
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circuit design with adjustable threshold using the independently controlled double gate feature of the vertical slit field effect transistor (vesfet)

;M. Weis;D. Schmitt-Landsiedel
neuropsychiatrie : klinik, diagnostik, therapie und rehabilitation : organ der gesellschaft osterreichischer nervenarzte und psychiater 2010 Vol. 8 pp. 275-278
94
weis2010advancescircuit

Abstract

The recently introduced Vertical Slit Field Effect Transistor allows for adjusting its threshold voltage through independent controllable gates. This feature can be applied to a broad range of circuits. In this paper two examples are presented. First, a ring oscillator with a wide frequency tuning range and second, a Schmitt trigger with a controllable hysteresis.

Keywords

engineering (general) civil engineering (general)

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DOI:
10.5194/ars-8-275-2010
URL:
http://www.adv-radio-sci.net/8/275/2010/ars-8-275-...

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ID: 243948
Ref Key: weis2010advancescircuit
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