Surface roughness of electrodes plays a key role in the dielectric breakdown of thin-film organic devices. The rate of breakdown will increase when there are stochastic sharp spikes on the surface of electrodes. Additionally, surface having spiking morphology makes the determination of dielectric strength very challenging, specifically when the layer is relatively thin. We demonstrate here a new approach to investigate the dielectric strength of organic thin films for organic light-emitting diodes (OLEDs). The thin films were deposited on a substrate using physical vapor deposition (PVD) under high vacuum. The device architectures used were glass substrate/indium tin oxide (ITO)/organic material/aluminum (Al) and glass substrate/Al/organic material/Al. The dielectric strength of the OLED materials was evaluated from the measured breakdown voltage and layer thickness.