Principles of construction and technology of creation of matrix photodetecting devices of ultra-violet radiation on the basis of natural diamond are considered. Measurements of spectral, volt-ampere characteristics, of dark current and leakage currents were carried out at various voltages for linear (2×64) and matrix (64×64) photodetecting devices. The basic opportunity of creation of such multielement structures possessing high sensitivity is shown for the first time. It is shown, that surface leakage currents play the dominating role in restriction of photosensivity of the given structures. It is found the significant dispersion of dark current and a photocurrent of matrix photodetectors on the basis of the natural diamond, concerned with heterogeneity of defective structure.