;Bobrenko Yu. N.;Yaroshenko N. V.;Sheremetova G. I.;Semikina T. V.;Atdaev B. S.
premiere educandum2009pp. 29-31
120
n.2009tekhnologiyaultraviolet
Abstract
High efficient photodiodes on the base of р-Cu1,8S/n-ZnS/(ZnS)х(CdSe)1–х/CdSe/Mo-structure with variband interlayer were fabricated. Optimization of this layer thickness was shown to be efficient method of reduction of photosensitivity behind UV region while preserving one in UV region.