The work of adhesion and the interface energy of NiAl/V coherent interface systems have been investigated using first-principles methods. The adhesion of the Ni-terminated interface is larger than the Al-terminated interface. The difference in charge density and the density of states show that the Ni-terminated interface is dominated by metallic bonds, and the Al-terminated interface is dominated by metallic and covalent bonds. To account for the effects of misfit dislocations on the semicoherent interfaces, the Peierls–Nabarro model combined with generalized stacking fault energy is employed to determine the interface energy. It is found that misfit dislocations can reduce the adhesion of the interface, and the reduction increases with the maximum of the restoring force.