Hydrogenated microcrystalline silicon thin films can be used to fabricate stable thin film solar cell, which were deposited by very high frequency plasma-enhanced chemical vapor deposition at low temperatures (~200°C). It has been found that the obtained film presented excellent structural and electrical properties, such as high growth rate and good crystallinity. With the decreasing of silane concentration, the optical gap and the dark conductivity increased, whereas the activation energy decreased. A reasonable explanation was presented to elucidate these phenomena. In addition, we fabricated p-i-n structure solar cells using the optimum microcrystalline silicon thin films, and preliminary efficiency of 4.6% was obtained for 1 μm thick microcrystalline silicon thin film solar cells with open-circuits voltage of 0.773 V and short-circuits current density of 12.28 mA/cm2. Future scope for performance improvement lies mainly in further increasing the short-circuit current.