In the current work, the structural and electrical properties of the In4Se3/Ga2S3 interfaces are investigated. The X-ray analysis which concern the structural evolutions that is associated with the substrate type has shown that the hexagonal κ-In2Se3 and the selenium (rhombohedral) rich orthorhombic In4Se3 phases of InSe are grown onto glass and gold substrates, respectively, at substrate of temperature of 300 °C in a vacuum media. The coating of the κ-In2Se3 and of In4Se3 with amorphous layer of Ga2S3 is accompanied with uniform strain. The In4Se3/Ga2S3 interface is found to be of attractive quantum confinement features as it exhibited a conduction and valence band offsets of 0.20 and 1.86 eV, respectively. When the Au/In4Se3/Ga2S3 interface was contacted with carbon metallic point contact, it reveals a back to back Schottky hybrid device that behaves typically as metal–oxidesemiconductor field effect transition (MOSFET). The depletion capacitance analysis of this device revealed built in voltage values of 1.91 and 1.64 V at the Au and C sides, respectively. The designed MOSFET which is characterized in the frequency domain of 0.01–1.80 GHz is observed to exhibit, resonance-anti-resonance phenomena associated with negative capacitance effect in a wide domain of frequency that nominate it for applications in electronic circuits as parasitic capacitance minimizer, bus switching speed enhancer and low pass/high pass filter at microwave frequencies. Keywords: k-In2Se3, Orthorhombic indium selenide, Double Schottky, Impedance, MOSFET