The anodization of the Ti-Cu (2%) alloy was carried out in a 5M H3PO4 solution for 2 minutes. The obtained layers are characterized by XPS, X-ray diffraction, and Raman spectroscopy. The results showed that the obtained films are composed of poorly crystallized TiO2 oxide. Electrochemical Impedance spectroscopy studies revealed that the thickness of the formed film increases with increasing anodization potential. Additionally, the resistance of charge transfer becomes higher when the anodization potential increases. Thus, the Mott Schottky model revealed that the formed film is an n-type semiconductor. The density of charge carriers is in good agreement with those found in the literature. Also, it is found that the flat-band potential increases with increasing treatment potential.