Dead layer on silicon p–i–n diode charged-particle detectors
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Dead layer on silicon p–i–n diode charged-particle detectors

B.L. Wall,J.F. Amsbaugh,A. Beglarian,T. Bergmann,H.C. Bichsel,Laura Bodine,N.M. Boyd,T.H. Burritt,Zine El Abidine Chaoui,T.J. Corona,P.J. Doe,S. Enomoto,F. Harms,G.C. Harper,M.A. Howe,E.L. Martin,Diana S. Parno,D.A. Peterson,L. Petzold,P. Renschler,R.G. Hamish Robertson,J. Schwarz,M. Steidl,T.D. Van Wechel,B.A. VanDevender,S. Wüstling,K.J. Wierman,John F. Wilkerson;B.L. Wall;J.F. Amsbaugh;A. Beglarian;T. Bergmann;H.C. Bichsel;Laura Bodine;N.M. Boyd;T.H. Burritt;Zine El Abidine Chaoui;T.J. Corona;P.J. Doe;S. Enomoto;F. Harms;G.C. Harper;M.A. Howe;E.L. Martin;Diana S. Parno;D.A. Peterson;L. Petzold;P. Renschler;R.G. Hamish Robertson;J. Schwarz;M. Steidl;T.D. Van Wechel;B.A. VanDevender;S. Wüstling;K.J. Wierman;John F. Wilkerson;
nuclear instruments and methods in physics research section a: accelerators, spectrometers, detectors and associated equipment 2014 Vol. 744 pp. 73-79
142
wilkerson2014nucleardead

Keywords

neutrino pin diode dead layer silicon detector

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DOI:
10.1016/j.nima.2013.12.048
URL:
https://sciprofiles.com/publication/view/6fcbe0b79...

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