Erratum: High-quality 100 nm thick InSb films grown on GaAs(001) substrates with an In x Al 1- x Sb continuously graded buffer layer (ACS Omega (2018) 3:11 (14562-14566) DOI: 10.1021/acsomega.8b02189)
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Erratum: High-quality 100 nm thick InSb films grown on GaAs(001) substrates with an In x Al 1- x Sb continuously graded buffer layer (ACS Omega (2018) 3:11 (14562-14566) DOI: 10.1021/acsomega.8b02189)

Kang, S.
ACS omega 2018 Vol. 3 pp. 16805
267
kang2018erratumacs

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[This corrects the article DOI: 10.1021/acsomega.8b02189.].

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DOI:
10.1021/acsomega.8b03172

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