Influence of metal-insulator-semiconductor gate structure on normally-off p-GaN heterojunction field-effect transistors

Influence of metal-insulator-semiconductor gate structure on normally-off p-GaN heterojunction field-effect transistors

Pu, T.
journal of crystal growth 2020 Vol. 532 pp. 0-0
232
pu2020influencejournal

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10.1016/j.jcrysgro.2019.125395
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