Sol-gel based zirconium dioxide dielectrics by oxygen-annealing at low temperature for highly stable and robust flexible resistive random access memory

Sol-gel based zirconium dioxide dielectrics by oxygen-annealing at low temperature for highly stable and robust flexible resistive random access memory

Park, S.
journal of alloys and compounds 2020 Vol. 825 pp. 0-0
212
park2020solgeljournal

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94707
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10.1016/j.jallcom.2020.154086
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