Conformal hexagonal-boron nitride dielectric interface for tungsten diselenide devices with improved mobility and thermal dissipation
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Conformal hexagonal-boron nitride dielectric interface for tungsten diselenide devices with improved mobility and thermal dissipation

Liu, Donghua;Chen, Xiaosong;Yan, Yaping;Zhang, Zhongwei;Jin, Zhepeng;Yi, Kongyang;Zhang, Cong;Zheng, Yujie;Wang, Yao;Yang, Jun;Xu, Xiangfan;Chen, Jie;Lu, Yunhao;Wei, Dapeng;Wee, Andrew Thye Shen;Wei, Dacheng;
Nature communications 2019 Vol. 10 pp. 1-11
273
liu2019conformalnature

Abstract

Plasma-enhanced chemical vapour deposition (PECVD) is an industrially compatible microelectronics technology. Here, the authors use PECVD to obtain low-temperature, catalyst-free growth of poly-crystalline two-dimensional hexagonal-boron nitride, thus enabling superior thermal dissipation in WSe2 field-effect transistors with mobility up to 121 cm2 V−1 s−1.

Keywords

Chemical technology Engineering (General). Civil engineering (General) Technology Archaeology Science physics

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