A systematic device-model calibration (extraction) methodology has been proposed to reduce parameter calibration time of advanced compact model for modern nano-scale semiconductor devices. The adaptive pattern search algorithm is a variant of the direct search method, which explore in the parameter space with adaptive searching step and direction. It is very straightforward, but powerful, in high dimensional optimization problem since adaptive step and direction are decided by simple computation. The proposed method iterates less but shows superior accuracy over the conventional method. It is possible to be applied to a behavioral or empirical model correspond to emerging devices, such as tunneling field-effect transistor (TFET) and negative capacitance field-effect transistor (NCFET) due to its universality in parameter calibration for the model accuracy.