Spiral growth without dislocations: molecular beam epitaxy of the topological insulator Bi2Se3 on epitaxial graphene/SiC(0001)
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Spiral growth without dislocations: molecular beam epitaxy of the topological insulator Bi2Se3 on epitaxial graphene/SiC(0001)

Liu Y;Weinert M;Li L;;
physical review letters 2012 Vol. 108 pp. -
186
y2012physicalspiral

Abstract

We report a new mechanism that does not require the formation of interfacial dislocations to mediate spiral growth during molecular beam epitaxy of Bi2Se3. Based on in situ scanning tunneling microscopy observations, we find that Bi2Se3 growth on epitaxial graphene/SiC(0001) initiates with two-dimen …

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National Center for Biotechnology Information NCBI NLM MEDLINE pubmed abstract nih national institutes of health national library of medicine pmid:22540484 doi:10.1103/physrevlett.108.115501 y liu m weinert l li

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