It has recently been shown, that doping of multilayer structures by diffusion or ion implantation and optimization of annealing of dopant and/or radiation defects gives us possibility to increase sharpness of p-n-junctions (single p-n-junctions and p-n-junctions within transistors) and to increase homogeneity of dopant distribution in doped area. In this paper we analyzed influence of pressure of vapor of infusing dopant during doping of multilayer structure on values of optimal parameters of technological process. We also consider an analytical approach to model technological process. In this paper we also consider an analytical approach to model redistribution of dopant.