Surface Oxidation of Bi2(Te,Se)3 Topological Insulators Depends on Cleavage Accuracy
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Surface Oxidation of Bi2(Te,Se)3 Topological Insulators Depends on Cleavage Accuracy

Conor R. Thomas,Matthew K. Vallon,Matthew G. Frith,Hikmet Sezen,Satya K. Kushwaha,Robert J. Cava,Jeffrey Schwartz,Steven L. Bernasek;Conor R. Thomas;Matthew K. Vallon;Matthew G. Frith;Hikmet Sezen;Satya K. Kushwaha;Robert J. Cava;Jeffrey Schwartz;Steven L. Bernasek;
chemistry of materials 2015 Vol. 28 pp. 35-39
172
bernasek2015chemistrysurface

Keywords

topological insulators surface oxidation insulators depends cleavage oxidation of bi2

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DOI:
10.1021/acs.chemmater.5b03923
URL:
https://sciprofiles.com/publication/view/d7e16f868...

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ID: 118038
Ref Key: bernasek2015chemistrysurface
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