Publisher Correction: Ambipolar device simulation based on the drift-diffusion model in ion-gated transition metal dichalcogenide transistors (npj Computational Materials, (2020), 6, 1, (24), 10.1038/s41524-020-0293-x)
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Publisher Correction: Ambipolar device simulation based on the drift-diffusion model in ion-gated transition metal dichalcogenide transistors (npj Computational Materials, (2020), 6, 1, (24), 10.1038/s41524-020-0293-x)

Ueda, A.
npj computational materials 2020 Vol. 6 pp. 0-0
182
ueda2020publishernpj

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10.1038/s41524-020-0314-9

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