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Bibliographies
55
1
Structure and Process of Infrared Hot Electron Transistor Arrays
2
Low-Temperature In-Induced Holes Formation in Native-SiOx/Si(111) Substrates for Self-Catalyzed MBE Growth of GaAs Nanowires
3
Optical properties of GaAs, GaP, and CVD diamond
4
investigation of the blistering and exfoliation mechanism of gaas wafers and sio<sub>2</sub>/si<sub>3</sub>n<sub>4</sub>/gaas wafers by he<sup>+</sup> and h<sup>+</sup> implantation
5
influence of a thiolate chemical layer on gaas (100) biofunctionalization: an original approach coupling atomic force microscopy and mass spectrometry methods
6
Plasmonically-powered hot carrier induced modulation of light emission in a two-dimensional GaAs semiconductor quantum well.
7
1 ML Wetting Layer upon Ga(As)Sb Quantum Dot (QD) Formation on GaAs Substrate Monitored with Reflectance Anisotropy Spectroscopy (RAS)
8
Erratum: High-quality 100 nm thick InSb films grown on GaAs(001) substrates with an In <inf>x</inf> Al <inf>1- x</inf> Sb continuously graded buffer layer (ACS Omega (2018) 3:11 (14562-14566) DOI: 10.1021/acsomega.8b02189)
9
High-Quality 100 nm Thick InSb Films Grown on GaAs(001) Substrates with an InxAl1–xSb Continuously Graded Buffer Layer
10
Comparative performance evaluation of c-Si and GaAs type PV cells with and without anti-soiling coating using energy and exergy analysis
11
Efeito do laser de baixa potência (AsGa, 904 ηm) na reparação óssea de fraturas em ratos Effect of low-level laser (GaAs, 904 ηm) for bone repair on fractures in rats
12
Trapping and filtering of light by single Si nanospheres in a GaAs nanocavity.
13
Post-thermal-Induced Recrystallization in GaAs/AlGaAs Quantum Dots Grown by Droplet Epitaxy with Near-Unity Stoichiometry.
14
Boosting Second Harmonic Radiation from AlGaAs Nanoantennas with Epsilon-Near-Zero Materials
15
Publisher’s Note:: On direct-writing methods for electrically contacting GaAs and Ge nanowire devices (Applied Physics Letters (2010) 96 (223107) DOI: 10.1063/1.3441404)
16
Evaluation of carrier density and mobility in Mn ion-implanted GaAs:Zn nanowires by Raman spectroscopy.
17
Photon recycling characteristics of InGaAs/GaAsP multiple quantum well solar cells incorporating a spectrally selective filter and distributed Bragg reflector.
18
Nanoscale electrical analyses of axial-junction GaAsP nanowires for solar cell applications.
19
Optical and Structural Properties of High-Efficiency Epitaxial Cu(In,Ga)Se Grown on GaAs.
20
An efficient and stable photoelectrochemical system with 9% solar-to-hydrogen conversion efficiency via InGaP/GaAs double junction.
21
Comparison of Light Trapping Limits Derived Using Various Methods for Thin Film GaAs Solar Cells.
22
Enhancing Photovoltaic Performance of GaAs Single-Junction Solar Cells by Applying a Spectral Conversion Layer Containing Eu-Doped and Yb/Er-Doped Phosphors.
23
Combining 1D and 2D waveguiding in an ultrathin GaAs NW/Si tandem solar cell.
24
Spectral splitting for an InGaP/GaAs parallel junction solar cell.
25
Carrier profiling with fast Fourier transform scanning spreading resistance microscopy: A case study for Ge, GaAs, InGaAs, and InP
26
GaAsBi growth on Ge: anti-phase domains, ordering, and exciton localization.
27
Photonic Crystal Circular Nanobeam Cavity Laser with Type-II GaSb/GaAs Quantum Rings as Gain Material
28
Reentrant Behavior of the Density vs. Temperature of Indium Islands on GaAs(111)A
29
Reflectance anisotropy of reconstructed GaAs(001) surfaces
30
Contactless Measurements of Carrier Concentrations in InGaAs Layers for Utilizing in InP-Based Quantum Cascade Lasers by Employing Optical Spectroscopy
31
Molecular Beam Epitaxy of Layered Group III Metal Chalcogenides on GaAs(001) Substrates
32
Contactless Measurements of Carrier Concentrations in InGaAs Layers for Utilizing in InP-Based Quantum Cascade Lasers by Employing Optical Spectroscopy
33
co thin film with metastable bcc structure formed on gaas(111) substrate
34
high frequency ingaas mosfet with nitride sidewall design for low power application
35
reflectivity in bragg mirrors of algaassb/alassb on inp
36
effect of annealing and of effect of annealing and of cooling rates on n-gaas electrode photoelectrochemical characteristics
37
a current transport mechanism on the surface of pd-sio2 mixture for metal-semiconductor-metal gaas diodes
38
effects of annealing on electrical and optical properties of a multilayer inas/gaas quantum dots system
39
reduced subthreshold characteristics and flicker noise of an algaas/ingaas phemt using liquid phase deposited tio2 as a gate dielectric
40
photo-induced conductivity of heterojunction gaas/rare-earth doped sno2
41
strain driven migration of in during the growth of inas/gaas quantum posts
42
numerical simulation of carbon nanotubes/gaas hybrid pv devices with amps-1d
43
damp-heat induced performance degradation for ingap/gaas/ge triple-junction solar cell
44
physics-based modeling and experimental study of si-doped inas/gaas quantum dot solar cells
45
dc-25 ghz and low-loss mems thermoelectric power sensors with floating thermal slug and reliable back cavity based on gaas mmic technology
46
long-wavelength inas/gaas quantum-dot light emitting sources monolithically grown on si substrate
47
density functional theory study on defect feature of asgagaas in gallium arsenide
48
optimization of the gaas-on-si substrate for microelectromechanical systems (mems) sensor application
49
Numerical and experimental analsis of an InP/InGaAs tunneling emitter bipolar transistor (TEBT) for low-voltage and low-power circuit applications
50
Contactless Measurements of Carrier Concentrations in InGaAs Layers for Utilizing in InP-Based Quantum Cascade Lasers by Employing Optical Spectroscopy
51
Highâtemperature droplet epitaxy of symmetric GaAs/AlGaAs quantum dots
52
Impact of Lattice Defects on Device Performance of AlGaAs/GaAs p-HEMTs
53
Growth and characterization of InAs epitaxial layer on GaAs(111)B
54
Highly polarized electrons from GaAs–GaAsP and InGaAs–AlGaAs strained-layer superlattice photocathodes
55
Temperature Activated Dimensionality Crossover in the Nucleation of Quantum Dots by Droplet Epitaxy on GaAs(111)A Vicinal Substrates - Scientific Reports